Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ${\sim}1.5\times 10^{-9}~\Omega \cdot~{\rm cm}^{2}$ are extracted from Ni(Pt) silicide contacts on in situ boron-doped ${\rm Si}_{0.7}{\rm Ge}_{0.3}$ with a chemical boron-doping density of $2\times 10^{21}/{\rm cm}^{3}$ . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.