Title :
3D microelectronic with BEOL compatible devices
Author :
Drouin, D. ; A-Bounouar, M. ; Droulers, G. ; Labalette, M. ; Pioro-Ladriere, M. ; Souifi, A. ; Ecoffey, S.
Author_Institution :
Lab. Nanotechnol. Nanosystemes (LN2), Univ. de Sherbrooke, Sherbrooke, QC, Canada
Abstract :
This presentation will address the potential of nanoelectronic devices 3D monolithic integration in the CMOS back-end-of-line (BEOL) to add functionality and enhance integrated circuits (ICs) performances.
Keywords :
CMOS integrated circuits; nanoelectronics; three-dimensional integrated circuits; 3D microelectronic; 3D monolithic integration; BEOL compatible devices; CMOS back-end-of-line; integrated circuits; nanoelectronic devices; CMOS integrated circuits; Circuit synthesis; Logic gates; Microelectronics; Nanoscale devices; Performance evaluation; Three-dimensional displays; 3D integration; nanoelectronics; resistive RAM; single electron transistor; tunneling transistor;
Conference_Titel :
VLSI Test Symposium (VTS), 2015 IEEE 33rd
Conference_Location :
Napa, CA
DOI :
10.1109/VTS.2015.7116262
