Title :
Power and sensor semiconductors driving automotive applications
Author_Institution :
ON Semicond., CTO, USA
Abstract :
Summary form only given. Cars are increasingly driven by electronics to reduce human error, improve traffic flow and to meet environmental regulations. The semiconductor components that enable this functionality range from medium voltage discretes to replace relays to integrated, high-voltage motor drivers with re-programmability at high temperature. In this talk we will review the technology trends underlying the improvements in power discretes, such as IGBTs and GaN HEMT devices, the scaling trends and integration needs of high-voltage BCD CMOS flows, as well as the adjacent assembly challenges of power devices and power integrated modules.
Keywords :
BIMOS integrated circuits; automotive electronics; driver circuits; high electron mobility transistors; insulated gate bipolar transistors; power semiconductor devices; sensors; BCD CMOS flow; GaN; HEMT device; IGBT; automotive application; bipolar-CMOS-DMOS; car; complementary metal-oxide semiconductor; environmental regulation; high-electron-mobility transistor; high-voltage motor driver; insulated-gate bipolar transistor; power device; power discrete; power integrated module; power semiconductor; semiconductor component; sensor semiconductor; technology trend; traffic flow;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117537
