Highly robust self-compliant and nonlinear TaOX/HfOX RRAM for 3D vertical structure in 1TnR architecture

Author

Lin, Y.D. ; Chen, Y.S. ; Tsai, K.H. ; Chen, P.S. ; Huang, Y.C. ; Lin, S.H. ; Gu, P.Y. ; Chen, W.S. ; Chen, P.S. ; Lee, H.Y. ; Rahaman, S.Z. ; Hsu, C.H. ; Chen, F.T. ; Ku, T.K.

Author_Institution

Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Owing to NAND flash technology facing its scaling limit, resistive random access memory (RRAM) with simple film stack and no cross coupling issue between cells is a promising candidate for future high density memory application [1,2]. The 1TnR architecture with 3D vertical RRAM (VRRAM) structure realizes ultra-low bit cost for high compact density array [3,4]. However, this novel 1TnR structure and processes have not been proved yet. To meet requirements of VRRAM array operation, the nonlinear resistive memory with an excellent self-compliance and low current operation is indispensable [5,6]. A large voltage margin for the device operated with compliance current (ΔV_COMP) and high nonlinearity for the device at low resistance state (LRS) with reliable read voltage should be addressed.

Keywords

hafnium compounds; memory architecture; resistive RAM; tantalum compounds; 1TnR architecture; 3D vertical RRAM structure; 3D vertical structure; HfO_X; TaO_X; VRRAM array operation; compact density array; compliance current; large voltage margin; low resistance state; nonlinear RRAM; nonlinear resistive memory; resistive random access memory; self-compliant RRAM; Computer architecture; Films; Hafnium compounds; Robustness; Stress; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117559

Filename

7117559