CMOS 170 GHz combline bandpass filter

Author

Xin Wang ; Hsien-Shun Wu ; Tzuang, Ching-Kuang C.

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

3

Abstract

A second-order combline bandpass filter (BPF) in the standard 0.13 μm 1P8M CMOS technology is presented. The miniaturized resonator consists of the on-chip thin-film microstrip transmission line and an interdigital capacitor. The characteristics of the transmission line and the capacitor are theoretically extracted for the filter syntheses. Based on the reported design procedures, a CMOS prototype are implemented and experimentally characterized, showing an insertion-loss of 2.7 dB at 170 GHz with a fractional bandwidth of 10 %. The chip size is 86.5 μm by 45 μm.

Keywords

CMOS integrated circuits; band-pass filters; field effect MIMIC; microstrip filters; millimetre wave filters; resonator filters; CMOS; frequency 170 GHz; interdigital capacitor; miniaturized resonator; on-chip thin-film microstrip transmission line; second order combline band-pass filter; size 0.13 mum; size 45 mum; size 86.5 mum; Band-pass filters; CMOS integrated circuits; Capacitors; Power transmission lines; Q-factor; Resonator filters; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves for Intelligent Mobility (ICMIM), 2015 IEEE MTT-S International Conference on

Conference_Location

Heidelberg

Type

conf

DOI

10.1109/ICMIM.2015.7117929

Filename

7117929