DocumentCode
711206
Title
Effect of power cycling parameters on predicted IGBT lifetime
Author
Sarkany, Zoltan ; Vass-Varnai, Andras ; Rencz, Marta
Author_Institution
Mentor Graphics, Budapest, Hungary
fYear
2015
fDate
7-14 March 2015
Firstpage
1
Lastpage
9
Abstract
In power electronics there is an increasing need for accurate lifetime prediction. The results of power cycling tests are widely used as input data for the lifetime calculation. The general method of power cycling is described in the JESD22-A122 JEDEC standard, however as the industry has made significant progress in power module design and reliability testing ever since the standard was published. Based on the latest considerations and published data, in this paper we try to collect and discuss some important factors, namely the electrical setup, cycle time and power cycling strategy, which can significantly affect the final test results, and allow the reliability engineers to make more focused testing definitions.
Keywords
insulated gate bipolar transistors; power electronics; semiconductor device reliability; IGBT lifetime prediction; JESD22- A122 JEDEC standard; cycle time; electrical setup; insulated gate bipolar transistors; lifetime calculation; power cycling test parameter effect; power electronics; power module design; reliability testing; Heating; Insulated gate bipolar transistors; Junctions; Temperature measurement; Temperature sensors; Voltage measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference, 2015 IEEE
Conference_Location
Big Sky, MT
Print_ISBN
978-1-4799-5379-0
Type
conf
DOI
10.1109/AERO.2015.7118982
Filename
7118982
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