Title :
Design of fully integrated receiver front-end for VSAT applications
Author :
Ping-Yi Wang ; Yun-Chun Shen ; Min-Chih Chou ; Yin-Cheng Chang ; Te-Lin Wu ; Da-Chiang Chang ; Hsu, Shawn S. H.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A fully integrated receiver front-end for very small aperture terminal (VSAT) applications in a 0.18-μm SiGe BiCMOS technology is demonstrated. To satisfy different specifications of various applications, the proposed receiver can down-convert the input signal in a wide RF range from 9.8 to 14.8 GHz to the IF frequency at L-band (950-2150MHz) with four differences LO frequencies. The noise figure is better than 7 dB with an averaged conversion gain of 45.5 dB for the entire RF band. The receiver frontend circuit demonstrate a high linearity (OP1dB > 4.5 dBm) with an excellent gain flatness (±1.5 dB) under a low power consumption (150mW).
Keywords :
BiCMOS integrated circuits; elemental semiconductors; radio receivers; satellite ground stations; 0.18-μm SiGe BiCMOS technology; IF frequency; LO frequencies; RF band; VSAT applications; averaged conversion gain; down converter; frequency 9.8 GHz to 14.8 GHz; frequency 950 MHz to 2150 MHz; fully integrated receiver front-end design; gain flatness; low power consumption; power 150 mW; very small aperture terminal applications; wide RF range; Gain; Noise; Noise measurement; Radio frequency; Receivers; Silicon germanium; Wideband; LNB; SiGe BiCMOS; down converter; receiver front-end; very small aperture terminal (VSAT);
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
Conference_Location :
San Diego, CA
DOI :
10.1109/SIRF.2015.7119858
