Gold nanorod array structured silicon nitride films for reliable RF MEMS capacitive switches

Author

Michalas, L. ; Xavier, S. ; Koutsoureli, M. ; El Jouaidis, O. ; Bansropun, S. ; Papaioannou, G. ; Ziaei, A.

Author_Institution

Univ. of Athens, Athens, Greece

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

89

Lastpage

91

Abstract

The electrical properties of gold rods nanostructured silicon nitride are investigated. The paper aims to determine the advantages of the nanostructured material over conventional dielectrics that will mitigate the dielectric charging and provide a potential candidate for insulating films in MEMS capacitive switches. Different nanorod diameters and densities were grown. A model was implemented to describe both the DC and low frequency electrical properties. Finally, the device performance up to 40GHz was assessed.

Keywords

dielectric materials; gold; insulating materials; microswitches; nanorods; silicon compounds; Au; MEMS capacitive switch reliability; SiN; dielectric charging mitigation; electrical property; gold nanorod array; insulating film; microelectromechanical system; nanostructured material; nanostructured silicon nitride film; Capacitance; Dielectric films; Dielectrics; Gold; Micromechanical devices; Radio frequency; Reliability; Dielectric charging; Gold nanorods; Nanostructured dielectrics; RF MEMS; Reliability; Silicon nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/SIRF.2015.7119884

Filename

7119884