Ku-band GaAs MMIC high power amplifier with high efficiency and broadband

Author

Inkwon Ju ; Hong-gu Ji ; In-Bok Yom

Author_Institution

Satellite & Wireless Convergence Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2015

fDate

22-23 April 2015

Firstpage

1

Lastpage

4

Abstract

In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; microwave power amplifiers; GaAs; GaAs PHEMT monolithic microwave integrated circuit; Ku-band GaAs MMIC high power amplifier; MMIC HPA; OIP3; PAE; bandwidth 12 GHz to 16 GHz; output third-order intercept point; power added efficiency; size 9.4 mm; Gain; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement; GaAs pHEMT; high-power amplifer (HPA); monolithic microwave integrated circuit (MMIC) power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Techniques (COMITE), 2015 Conference on

Conference_Location

Pardubice

Print_ISBN

978-1-4799-8121-2

Type

conf

DOI

10.1109/COMITE.2015.7120324

Filename

7120324