Back-end integration of multilayer photonics on silicon

Author

Shiyang Zhu ; Guo-Qiang Lo

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore

fYear

2015

fDate

22-26 March 2015

Firstpage

1

Lastpage

3

Abstract

We present vertically-stacked a-Si:H and AlN photonic circuits deposited on silicon using back-end CMOS technology. At 1550-nm telecom wavelengths, the a-Si:H (0.5-μm×0.22-μm) and AlN (1-μm×0.4-μm) channel waveguides are measured to have low propagation losses of ~3.8 and ~1.4 dB/cm, respectively. Various passive devices with high performance are demonstrated on these two photonic layers, including multimode interferences (MMI), waveguide ring resonators (WRR), and arrayed-waveguide gratings (AWG). Moreover, the thermo-optic coefficients (dn/dT) of a-Si:H and AlN are measured to be ~2.60×10^-4 and ~3.56×10^-5 K^-1, respectively.

Keywords

CMOS integrated circuits; III-V semiconductors; aluminium compounds; amorphous semiconductors; arrayed waveguide gratings; elemental semiconductors; hydrogen; integrated optics; integrated optoelectronics; optical losses; optical multilayers; optical resonators; silicon; thermo-optical effects; AWG; MMI; Si:H-AlN-Si; WRR; arrayed-waveguide gratings; back-end CMOS technology; back-end integration; channel waveguides; multilayer photonics; multimode interferences; passive devices; propagation losses; size 0.22 mum; size 0.4 mum; size 0.5 mum; size 1 mum; thermo-optic coefficients; vertically-stacked photonic circuits; waveguide ring resonators; wavelength 1550 nm; Aluminum nitride; III-V semiconductor materials; Optical waveguides; Photonics; Silicon; Temperature measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communications Conference and Exhibition (OFC), 2015

Conference_Location

Los Angeles, CA

Type

conf

Filename

7121592