DocumentCode
712762
Title
Heterogeneously integrated waveguide-coupled photodiodes on SOI with 12 dBm output power at 40 GHz
Author
Xiaojun Xie ; Qiugui Zhou ; Norberg, Erik ; Jacob-Mitos, Matt ; Yaojia Chen ; Ramaswamy, Anand ; Fish, Gregory ; Bowers, John E. ; Campbell, Joe ; Beling, Andreas
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
fYear
2015
fDate
22-26 March 2015
Firstpage
1
Lastpage
3
Abstract
We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.95 A/W and 48 GHz bandwidth. The RF output power reaches 12 dBm at 40 GHz, which is the highest reported output power of high-speed waveguide photodiodes.
Keywords
III-V semiconductors; indium compounds; optical waveguides; photodiodes; silicon-on-insulator; InP; SOI; bandwidth 48 GHz; frequency 40 GHz; heterogeneously integrated waveguide-coupled photodiodes; high-speed waveguide photodiodes; silicon-on-insulator; uni-traveling carrier photodiodes; Bandwidth; Current measurement; Loss measurement; Optical waveguides; Photodiodes; Power generation; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location
Los Angeles, CA
Type
conf
Filename
7122150
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