Investigation of HCI reliability in interdigitated LDMOS

Author

Kyuheon Cho ; Seonghoon Ko ; Machida, Fumie ; Jaeho Kim ; Jaejune Jang ; Uihui Kwon ; Keun-Ho Lee ; Youngkwan Park

Author_Institution

Semicond. R&D Center, Hwasung, South Korea

fYear

2015

fDate

10-14 May 2015

Firstpage

69

Lastpage

72

Abstract

Novel time-dependent kinetic model for interface trap formation is developed resulting in consideration of hot electron/hole injection in Interdigitated LDMOS. Proposed kinetic model replaces Si-H equation with N_it equation. HCI degradation of Interdigitated LDMOS is classified into two mechanisms. First mechanism is attributed to decreased electron densities due to electron trapping in interdigitated active region. Second mechanism occurs in accumulation region around side STI due to hot hole injection. First mechanism leads to an increase in R_ON upon stress, whereas second mechanism decreases R_ON.

Keywords

MOSFET; electron density; electron traps; hot carriers; isolation technology; semiconductor device reliability; HCI degradation; accumulation region; decreased electron densities; electron trapping; hot electron-hole injection; hot hole injection; interdigitated LDMOS; interdigitated active region; interface trap formation; side STI; time-dependent kinetic model; Charge carrier processes; Degradation; Electric fields; Hot carriers; Human computer interaction; Kinetic theory; Mathematical model; Degradation; HCI; Interdigitated LDMOS; Interface trap density(Nit); Si-H bonds; TCAD; Trap formation kinetics;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123391

Filename

7123391