Title :
Series-connection of SiC normally-on JFETs
Author :
Xueqing Li ; Bhalla, Anup ; Alexandrov, Petre ; Hostetler, John ; Fursin, Leonid
Author_Institution :
United Silicon Carbide, Inc., Monmouth Junction, NJ, USA
Abstract :
The SiC normally-on JFET is a new member in the family of power devices. It is reliable and robust under high-temperature and high-voltage harsh operatioing conditions due to its pn-junction gate control and the excellent physical and electrical properties of Silicon Carbide. At present, 1200V SiC normally-on JFETs are commercially available and higher voltage JFETs are still under development. There is a strong need for a medium-voltage 4kV-15kV power switch that can be moved into mass production quickly, exploits all the material advantages of SiC technology, and is cost-effective. This work presents an innovative method to realize such a high voltage power switch by series-connecting low voltage SiC normally-on JFETs using a unique circuit topology. This work focuses on the discussions of the operation principle and the experimental demonstrations of the proposed technique.
Keywords :
junction gate field effect transistors; p-n junctions; power field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; SiC; electrical property; high voltage power switch; medium-voltage power switch; normally-on JFET; physical property; pn-junction gate control; power devices; series-connection; silicon carbide; unique circuit topology; voltage 1200 V; voltage 4 kV to 15 kV; JFETs; Leakage currents; Logic gates; MOSFET; Silicon carbide; Switches; Temperature measurement; Cascode; JFETs; Normally-on; Series Connection; Silicon Carbide;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123429
