DocumentCode
712874
Title
Ultra low inductance power module for fast switching SiC power devices
Author
Takao, Kazuto ; Kyogoku, Shinya
Author_Institution
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
fYear
2015
fDate
10-14 May 2015
Firstpage
313
Lastpage
316
Abstract
A novel packaging structure for high-speed switching silicon carbide (SiC) power modules has been proposed based on antiparalleled phase leg units. A prototype 1200 V-360 A SiC power module is developed using SiC-MOSFETs and SiC-SBDs and the very low parasitic inductance of 3.8 nH has been achieved. The experimental results show that the ultra-fast switching can be available owing to the very low parasitic inductance.
Keywords
MOSFET; electronics packaging; inductance; silicon compounds; SiC; antiparalleled phase leg units; current 360 A; fast switching silicon carbide power devices; high-speed switching silicon carbide power modules; ultra low inductance power module; ultra-fast switching; voltage 1200 V; Capacitors; Inductance; Integrated circuit modeling; MOSFET; Multichip modules; Silicon carbide; Switches; Fast switching; Parasitic inductance; Power mobule; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123452
Filename
7123452
Link To Document