DocumentCode
712875
Title
Lifetime analysis of power modules with new packaging technologies
Author
Heuck, N. ; Bayerer, R. ; Krasel, S. ; Otto, F. ; Speckels, R. ; Guth, K.
Author_Institution
Infineon Technol. AG, Warstein, Germany
fYear
2015
fDate
10-14 May 2015
Firstpage
321
Lastpage
324
Abstract
Several novel packaging technologies for power modules have been recently introduced to meet the future requirements of higher reliability and temperature stability. Using copper wire bonds for the top-side interconnect and silver sintered or diffusion soldered die attach layers led to a significant increase of lifetime. It was subsequently shown that the power cycling lifetime of modules without a baseplate is mainly limited by the substrate metallization, while modules employing a baseplate and a substrate-to-baseplate solder interconnect fail due to degradation within the solder layer. The investigations in this paper continue with the description and systematization of degradation effects in new interconnect technologies of power modules. As a result first lifetime models for modules with and without baseplate are provided. Thereby, accepted lifetime models for standard technologies are adopted to the degradation patterns of the new technologies.
Keywords
copper; lead bonding; power semiconductor devices; semiconductor device metallisation; semiconductor device models; semiconductor device packaging; semiconductor device reliability; silver; solders; Ag; Cu; copper wire bonds; degradation patterns; diffusion soldered die attach layers; interconnect technologies; lifetime analysis; lifetime models; packaging technologies; power cycling lifetime; power modules; silver sintered die attach layers; solder layer; substrate metallization; substrate-to-baseplate solder interconnect; temperature stability; top-side interconnect; Copper; Degradation; Microassembly; Multichip modules; Reliability; Substrates; Wires; copper wire bonding; diffusion soldering; lifetime model; power cycling; sintering;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123454
Filename
7123454
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