Statistical lifetime analysis of memristive crossbar matrix

Author

Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio

Author_Institution

Dept. of Electron. Eng., UPC, Barcelona, Spain

fYear

2015

fDate

21-23 April 2015

Firstpage

1

Lastpage

6

Abstract

Memristors are considered one of the most favorable emerging device alternatives for future memory technologies. They are attracting great attention recently, due to their high scalability and compatibility with CMOS fabrication process. Alongside their benefits, they also face reliability concerns (e.g. manufacturing variability). In this sense our work analyzes key sources of uncertainties in the operation of the memristive memory and we present an analytic approach to predict the expected lifetime distribution of a memristive crossbar.

Keywords

CMOS memory circuits; integrated circuit reliability; matrix algebra; memristors; statistical analysis; CMOS fabrication process; analytic approach; lifetime distribution; memory technologies; memristive crossbar matrix; memristors; reliability concerns; statistical lifetime analysis; Gaussian distribution; Memristors; Monte Carlo methods; Probability distribution; Reliability; Resistance; Switches; Memristor; RRAM; crossbar; emerging device; endurance; process variability; uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2015 10th International Conference on

Conference_Location

Naples

Type

conf

DOI

10.1109/DTIS.2015.7127378

Filename

7127378