Title :
Statistical lifetime analysis of memristive crossbar matrix
Author :
Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio
Author_Institution :
Dept. of Electron. Eng., UPC, Barcelona, Spain
Abstract :
Memristors are considered one of the most favorable emerging device alternatives for future memory technologies. They are attracting great attention recently, due to their high scalability and compatibility with CMOS fabrication process. Alongside their benefits, they also face reliability concerns (e.g. manufacturing variability). In this sense our work analyzes key sources of uncertainties in the operation of the memristive memory and we present an analytic approach to predict the expected lifetime distribution of a memristive crossbar.
Keywords :
CMOS memory circuits; integrated circuit reliability; matrix algebra; memristors; statistical analysis; CMOS fabrication process; analytic approach; lifetime distribution; memory technologies; memristive crossbar matrix; memristors; reliability concerns; statistical lifetime analysis; Gaussian distribution; Memristors; Monte Carlo methods; Probability distribution; Reliability; Resistance; Switches; Memristor; RRAM; crossbar; emerging device; endurance; process variability; uncertainty;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2015 10th International Conference on
Conference_Location :
Naples
DOI :
10.1109/DTIS.2015.7127378