A simple numerical modeling technique for PSP-NQS differential equation

A simple numerical technique is developed to solve the non-quasi-static (NQS) differential equation of the PSP MOSFET model. The proposed technique has the advantage to get rid of the PSP internal nodes used to model the NQS differential equation. Consequently, this leads to enhance the simulation capacity. The suggested technique also provides a better convergence scheme which improves the simulation performance. This technique is implemented inside the circuit simulator Eldo using its general user defined model (GUDM) template. However, it is a general technique and can be adopted by any circuit simulator. The proposed technique results are validated compared to the original implementation of the NQS in the PSP model. The technique shows a 2X reduction in the number of newton iterations keeping the accuracy loss lower than 0.3%.