Title :
AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods
Author :
Nan-Ming Lin ; Shih-Chang Shei ; Shoou-Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
Abstract :
The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.
Keywords :
III-V semiconductors; LED displays; adsorption; aluminium compounds; gallium compounds; indium compounds; nanostructured materials; wide band gap semiconductors; zinc compounds; AlGaInP; Hm methods; LED I; LED II; LED III; LED IV; LED V; SILAR; ZnO; current 20 mA; current injection; electrical properties; forward voltages; hydrothermal methods; light-emitting diodes; nanostructures; power 0.41 mW; power 0.50 mW; power 0.53 mW; power 0.56 mW; power 0.60 mW; successive ionic layer adsorption and reaction; voltage 2.0 V; Adsorption; II-VI semiconductor materials; Light emitting diodes; Nanostructures; Power generation; Surface treatment; Zinc oxide; AlGaInP; ZnO; light-emitting diodes (LEDs); nanostructure;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131953
