Title :
Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications
Author :
Prakash, Amit ; Park, J.-S. ; Song, J. ; Lim, S.-J. ; Park, J.-H. ; Woo, J. ; Cha, E. ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
In this study, we have investigated the multi-level cell (MLC) characteristics and variability analysis of multiple resistance states of one of the most promising and extensively studied binary oxide (HfOx) based nanometer scale RRAM stack by varying the switching current. The device size and thickness of stack layers were confirmed by transmission electron microscope (TEM) images. In the CMOS friendly stack with TiN/Ti/HfOx/TiN structure, 3 distinct levels of low resistance states (LRS) with same high resistance state (HRS) were successfully obtained which can be used in 2-bit per cell storage. It was found that the switching variability was the strong function of the number of defects in the filament or the switching current (IC) and it significantly improved at higher IC. All the resistance levels show good inter switching ability and reliability characteristics such as read disturb immunity, read pulse endurance (>108 times) and data retention.
Keywords :
hafnium compounds; nanoelectronics; resistive RAM; titanium compounds; transmission electron microscopy; HfOx; MLC characteristic; TEM; TiN; binary oxide; high resistance state; low resistance states; multilevel cell; multistate resistance switching; nanometer scale RRAM stack; switching current; transmission electron microscope; ultra-high density memory; variability analysis; CMOS integrated circuits; Hafnium compounds; Memory management; Resistance; Switches; Tin; HfOx; Multi-level cell; RRAM; high density storage; switching variability;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132027
