Electrical properties of Barium Strontium Titanate thin films for embedded capacitor applications

Author

Peelamedu, Raviprakash ; Prakash, Adithya ; Velez, Victor H. ; Sundaram, Kalpathy B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

fYear

2015

fDate

9-12 April 2015

Firstpage

1

Lastpage

2

Abstract

This work focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of R.F. sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5Sr0.5TiO3) thin film capacitors. Approximately 2000Å of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400, 450, 500 and 550°C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N₂, 100% O₂ and 10% O₂ + 90% N₂ at 575°C in the same sputtering system (PVD anneal) as well as in a tube furnace.

Keywords

annealing; barium compounds; ferroelectric capacitors; ferroelectric thin films; silicon; sputter deposition; strontium compounds; thin film capacitors; titanium compounds; BST thin film; Ba_0.5Sr_0.5TiO₃; PDA; PVD anneal; RF sputter deposition; deposition temperature; electrical property; embedded capacitor application; ferroelectric barium strontium titanate thin film; post deposition annealing; silicon substrate; thin film capacitor; tube furnace; Annealing; Barium; Capacitors; Films; Handheld computers; Substrates; Temperature; Annealing; BST; R.F. Sputtering; Thin Films;

fLanguage

English

Publisher

ieee

Conference_Titel

SoutheastCon 2015

Conference_Location

Fort Lauderdale, FL

Type

conf

DOI

10.1109/SECON.2015.7132921

Filename

7132921