• DocumentCode
    71541
  • Title

    Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

  • Author

    Verma, Rekha ; Bhattacharya, Sitangshu ; Mahapatra, Santanu

  • Author_Institution
    Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    502
  • Lastpage
    505
  • Abstract
    In this brief, we present a physics-based solution for the temperature-dependent electrical resistance of a suspended metallic single-layer graphene (SLG) sheet under Joule self-heating. The effect of in-plane and flexural phonons on the electron scattering rates for a doped SLG layer has been considered, which particularly demonstrates the variation of the electrical resistance with increasing temperature at different current levels using the solution of the self-heating equation. The present solution agrees well with the available experimental data done with back-gate electrostatic method over a wide range of temperatures.
  • Keywords
    electric resistance; electron-phonon interactions; electrostatics; graphene; C; Joule self-heating equation effect; SLG sheet; back-gate electrostatic method; electron scattering rate; flexural phonons effect; in-plane phonons effect; physics-based solution; suspended metallic single-layer graphene sheet; temperature-dependent electrical resistance; Conductivity; Phonons; Resistance; Scattering; Temperature distribution; Thermal conductivity; Graphene; phonons; self-heating effect;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2226038
  • Filename
    6355974