Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors

The radio frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency (ft), maximum oscillation frequency (fmax) and stability factor. In addition, the superb RF performances of double-gate extended source TFETs were obtained by designing gate length. The stability factor and small signal parameters such as gate capacitance and transconductance can be extracted using a non-quasi static small signal model are calculated using Y-parameters from a TCAD simulation. It was confirmed that the double-gate extended source TFET is suitable for RF applications.