Title :
Investigation of high- and low-κ Gate dielectrics in tuning of graphene-loaded THz antennas
Author :
Hekmati, Reza ; Fard, Hassan Ghafori ; Neshat, Mohammad ; Fathipour, Morteza
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
The effect of low- and high- κ gate dielectrics and their thickness on tuning of graphene-loaded THz antennas are studied. According to our study, SiO2 provides higher tuning range for a resonance frequency as compared to Al2O3. For the particular antenna considered in this study, as thickness of SiO2 is decreased tuning range changed between 190 to 320 GHz. This amount for Al2O3 is 190 to 220 GHz. Based on our results, decreasing the thickness of SiO2 can increase the bandwidth more than 68 percent. Thickness variation of Al2O3 could enhance bandwidth around 17 percent. In both gate dielectrics, higher parallel resonance frequency is achieved by lower dielectric thickness.
Keywords :
aluminium compounds; antennas; graphene; high-k dielectric thin films; silicon compounds; Al2O3; SiO2; frequency 190 GHz to 320 GHz; graphene-loaded THz antennas; high-κ gate dielectrics; low-κ gate dielectrics; resonance frequency; tuning range; Conferences; Decision support systems; Electrical engineering; Antenna; Bandwidth; Gate dielectric; Graphene; Terahertz; Tuning;
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146376
