Well width and alloy concentration dependence of optical properties of slow light devices

This paper theoretically presents a technique for characteristics tuning of AlGaAs/GaAs multiple quantum well (MQW) slow light devices based on excitonic population oscillations. The multiple quantum well slow light device is analyzed and simulated using semiconductor Bloch equations. In addition the simulation results are shown for the quantum wells (QWs) of different width and barriers with different alloy concentration. The results demonstrate that the optical properties of the slow light device, such as central frequency and bandwidth, are dependent on quantum well width and aluminum percentage of the multiple quantum well structure. According to the best theoretical results, the central frequency of the device can be shifted in a range of 2THz.