Elements for photodetectors based on epitaxial layers In4Se3, In4Te3 and Cdsb

Author

Vorobets, George ; Vorobets, Olexandr ; Khalavka, Yuriy ; Strebezhev, Volodymyr ; Strebezhev, Viktor ; Balazyuk, Vitaliy

Author_Institution

Dept. of Comput. Syst. & Networks, Yuriy Fedkovych Chernivtsi Nat. Univ., Chernivtsi, Ukraine

fYear

2015

fDate

21-24 April 2015

Firstpage

225

Lastpage

227

Abstract

Photosensitive elements of semiconductor compounds In₄Se₃, In₄Te₃, CdSb and heterostructures were obtained by liquid phase epitaxy method. Laser modification of structural and phase state of epitaxial layers was conducted. The methods of SEM, AFM and STM microscopy were used for investigation of transformation processes in nanostructured regions on boundaries of hetero structures. Spectral characteristics and parameters of photosensitive elements and IR filters were studied. Interference absorptive filters for cutting off infrared range of the spectrum were formed by deposition in a vacuum on these crystals of thin films.

Keywords

atomic force microscopy; cadmium compounds; indium compounds; interference filters; laser materials processing; liquid phase epitaxial growth; nanostructured materials; photodetectors; scanning electron microscopy; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; AFM; CdSb; IR filters; In₄Se₃; In₄Te₃; SEM; STM microscopy; epitaxial layers; heterostructures; infrared range; interference absorptive filters; laser modification; liquid phase epitaxy method; nanostructured regions; phase state; photodetectors; photosensitive elements; semiconductor compounds; spectral characteristics; structural state; transformation processes; Compounds; Epitaxial growth; Epitaxial layers; Heterojunctions; Interference; Optical fiber filters; CdSb; In4Se3; epitaxial layer; heterostructure; infrared filter; laser modification;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146878

Filename

7146878