Title :
Thermal analysis of high-power multi-finger FET
Author :
Timofeyev, Vladimir ; Semenovskaya, Elena ; Faleeva, Elena
Author_Institution :
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine
Abstract :
The paper presents a method for temperature calculation of power submicron field-effect transistor. Described method establishes dependence of the temperature of the transistor on its thermo- and electrophysical parameters, geometrical size and shape. The calculation of thermal fields in GaN power FET was made.
Keywords :
III-V semiconductors; gallium compounds; power field effect transistors; thermal analysis; wide band gap semiconductors; electrophysical parameters; field-effect transistor; high-power multi-finger FET; power FET; temperature calculation; thermal analysis; thermophysical parameters; Field effect transistors; Heating; Logic gates; Mathematical model; Substrates; Temperature dependence; multi-finger power field-effect transistor; temperature; thermal model;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146882
