• DocumentCode
    718528
  • Title

    Automatic test complex for parametric control of power NMOS and PMOS transistors

  • Author

    Aristova, N.E. ; Borisov, A.Y. ; Tararaksin, A.S. ; Kessarinskiy, L.N. ; Yanenko, A.V.

  • Author_Institution
    Nat. Res. Nucl. Univ. MEPhI (Moscow Eng. Phys. Inst.), Moscow, Russia
  • fYear
    2015
  • fDate
    21-23 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This article describes the automated test complex for parametric control of power n- and p-MOSFET transistors before, during and after irradiation tests based on the National instruments PXI standard equipment.
  • Keywords
    MOSFET; automatic testing; power transistors; semiconductor device testing; automatic test complex; parametric control; power NMOS transistors; power PMOS transistors; Current measurement; MOSFET; Microelectronics; Nickel; Radiation effects; Threshold voltage; MOS transistor; PXI; parametric control; radiation; tests;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Communications (SIBCON), 2015 International Siberian Conference on
  • Conference_Location
    Omsk
  • Print_ISBN
    978-1-4799-7102-2
  • Type

    conf

  • DOI
    10.1109/SIBCON.2015.7146984
  • Filename
    7146984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=718528