Conduction mechanism of metal-TiO2-Si structures

The influence of annealing of titanium oxide films on the currents of metal-TiO₂-n-Si structures was investigated. It has been shown that regardless of the annealing temperature the conductivity of structures at positive potentials on the gate is determined by currents limited by the space charge in the dielectric with traps exponentially distributed on energy. At negative potentials the main contribution to the current is the thermal generation of charge carriers in the space charge region in the silicon. Interface properties of TiO₂-n-Si depend on the structural and phase state of the titanium oxide film which are determined by the annealing temperature.