Title :
Automated I–V measurement system for CMOS SOI transistor test structures
Author :
Shvetsov-Shilovskiy, I.I. ; Nekrasov, P.V. ; Ulanova, A.V. ; Smolin, A.A. ; Sogoyan, A.V.
Author_Institution :
Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
Abstract :
The article discusses the creation of automated system for I-V measurements of CMOS SOI transistor test structures based on National Instruments PXI platform. The article describes the measurement system circuit diagram and its components. Article describes measurement process, user interface and resulting current-voltage characteristic example.
Keywords :
CMOS integrated circuits; computerised instrumentation; electric current measurement; integrated circuit testing; silicon-on-insulator; voltage measurement; CMOS SOI transistor test structures; National Instruments PXI platform; Si; automated I-V measurement system; current-voltage characteristic; measurement process; measurement system circuit diagram; user interface; CMOS integrated circuits; Current measurement; Nickel; Radiation effects; Time measurement; Transistors; Voltage measurement; CMOS SOI; PXI-4071; automated measurement system;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147282
