The charge character in the double-barrier quantum dots in well hybrid structure

We present the carrier transport properties in the double-barrier InAs quantum dots and InGaAs quantum well hybrid structure of the photoelectric device and analyze the capacitance hysteresis phenomenon. Due to the coupling effect among multiple quantum dots, the I-V and C-V curves measured of the photoelectric device shows the capacitance changes with the light intensity. We analyze the relationships between charge and discharge states of the hysteresis curves further. When a dumping readout designed and applied, it shows a response enhanced and the sensitivity detected to push more weak light level. It indicates the photoelectric device would be a promising candidate both in quantum information applications and highly sensitive imaging applications operating.