Title :
A Reliable Cross-Point MLC ReRAM with Sneak Current Compensation
Author :
Jong-Min Baek ; Sang-Yun Kim ; Jae-Koo Park ; Jae-Young Park ; Kee-Won Kwon
Author_Institution :
Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
In this paper, a reliable cross-point MLC ReRAM is introduced and fully integrated with 350nm CMOS technology. Both resistance states and variations are widely investigated with different compliance current. The self-termination scheme is adopted to prevent overstress to switched cell in set operation. As a result of self termination, write failure is prohibited and the uniformity on LRS of 300 uA compliance improved 2.3 times. In order to deter the compliance current offset in set operation, a sneak current compensation scheme of which controlled by ADC is proposed.
Keywords :
CMOS memory circuits; multivalued logic circuits; resistive RAM; CMOS technology; compliance current offset; cross-point MLC ReRAM; current 300 muA; self-termination scheme; size 350 nm; sneak current compensation; write failure; Arrays; Current measurement; Microprocessors; Reliability; Resistance; Switches;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150272
