40Nm contact related process optimization for defect reduction

Author

Zhibin He ; Xubin Jing ; Jian Cao ; Yuming Qiu ; Junhua Yan ; Jun Zhou ; Pang, Albert

Author_Institution

Shanghai Huali Microelectron. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Ni (Nickel) piping, Contact openness, and W (Tungsten) recess are three major defects encountered in 40nm Contact related process development. In this paper, PAI (Pre- Amorphous Implantation) and Ni capping layer were optimized for Ni piping reduction. Contact etch process window was enlarged to eliminate Contact openness. The specific PMOS-localized defect phenomenon was studied. High ILD (Interlayer Dielectric) CMP oxide loss was found responsible to cause poor post-CMP uniformity, which was the main contributor to W recess defect thereafter. Finally, we had obtained an effective ILD thickness and uniformity control in CMP and thus, solving W recess defect.

Keywords

amorphous semiconductors; chemical mechanical polishing; crystal defects; ion implantation; nickel; semiconductor doping; tungsten; CMP oxide loss; Ni; PMOS-localized defect phenomenon; W; contact etch process window; contact openness; contact related process optimization; defect reduction; high interlayer dielectric; nickel capping layer; nickel piping; post-CMP uniformity; pre-amorphous implantation; size 40 nm; tungsten recess; Films; Lead; Logic gates; MOS devices; Nickel; Silicon; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153320

Filename

7153320