• DocumentCode
    720789
  • Title

    PMMA removal selectivity to PS using dry etch approach for sub-10nm node applications

  • Author

    Sarrazin, Aurelien ; Pimenta-Barros, Patricia ; Posseme, Nicolas ; Barnola, Sebastien ; Gharbi, Ahmed ; Argoud, Maxime ; Tiron, Raluca ; Cardinaud, Christophe

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising alternative lithography techniques for sub-10 nm nodes. In this paper, we propose to study PMMA removal selectively to PS by plasma etching. This challenge requires a good selectivity between both polymers. Our best chemistries developed on blanket wafers have been tested on cylindrical and lamellar patterned wafers.
  • Keywords
    lithography; polymer blends; self-assembly; semiconductor technology; sputter etching; BCP; PMMA removal selectivity; PS; blanket wafer; block copolymer; directed self-assembly; dry etch approach; lamellar patterned wafer; lithography technique; plasma etching; poly(methyl methacrylate); polystyrene; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153384
  • Filename
    7153384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720789