Influence of sputtering gas on resistivity of thin Ni silicide films

Author

Imamura, H. ; Kakushima, K. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Wakabayashi, H. ; Tsutsui, K. ; Natori, K. ; Iwai, H.

Author_Institution

Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Ni silicide film, formed by stacked structure of nickel and silicon, have been fabricated by RF magnetron sputtering using different gas species. The resistivity of the silicide films have been measured. While the resistivity of the film with Ar gas sputtering gradually decreases with higher annealing temperature, films with Kr gas sputtering show resistivity as low as the bulk ones in a wide process-temperature window. A model to explain the mechanism difference has been proposed.

Keywords

annealing; argon; electrical resistivity; krypton; nickel compounds; semiconductor thin films; silicon; sputtering; Ar; Kr; NiS₂; RF magnetron sputtering; annealing temperature; argon gas sputtering; krypton gas sputtering; silicon; sputtering gas influence; thin nickel silicide film resistivity; wide process-temperature window; Amorphous magnetic materials; Annealing; Conductivity; Magnetic devices; Magnetic films; Nickel; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153402

Filename

7153402