Research of silicon cap for epitaxy sige in source/drain regions

Author

Jianqin Gao ; Jun Tan ; Haifeng Zhou ; Jingxun Fang ; Pang, Albert

Author_Institution

Res. & Dev. Dept., Shanghai Huali Microelectron. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

SiGe epilayer is extensively used as stressor in source/drain regions in PMOS. However, it is a big challenge to form germanosilicide with low contact resistivity due to poor thermal stability at high temperature. Therefore, silicon cap deposited on SiGe is applied to reduce contact resistance. In static random access memory (SRAM) area, silicon cap profile is apt to be un-conformal due to SiGe pattern effect. In this paper, the effect of silicon source, etching gas, doping gas and temperature on Si cap profile was investigated. Finally conformal silicon cap was obtained on SiGe epilayer with relatively high growth rate, which could reduce contact resistance.

Keywords

Ge-Si alloys; MOSFET; SRAM chips; contact resistance; epitaxial growth; etching; semiconductor doping; silicon; thermal stability; PMOS; SRAM; SiGe; contact resistance; doping gas; drain region; etching gas; germanosilicide; p-type metal-oxide-semiconductor; pattern effect; silicon cap profile; silicon-germanium epilayer; silicon-germanium epitaxy; source region; static random access memory; stressor; thermal stability; Boron; Crystals; Epitaxial growth; Random access memory; Silicon; Silicon germanium; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153413

Filename

7153413