Application of measurement method on Cu-CMP process

Author

Yi Ding ; Yefang Zhu ; Junhua Yan ; Conggang Wang ; Wenbin Fan ; Pang, Albert

Author_Institution

Shanghai Huali Microelectron. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Chemical Mechanical Polishing (CMP) is considered the only processing technique that can achieve high level of local and global planarity of wafer surface and therefore widely used on IC manufacture industry ^[1]. However, It becomes more difficult but important to monitor CMP process performance well. In this paper, Metapulse (provided by Rudolph) and Aleris8350 (provided by Kla-Tencor) were used to monitor Cu-CMP process. The theory and characteristic of these two measurement tools were studied by using two typical monitor structures (OCD pad and Bond pad) to monitor Cu-CMP process. Performance evaluation is based on mean, range, and uniformity. Our results show that Aleris8350 is suitable for dielectric measurement to reflect topography performance of the whole wafer and Metapulse has advantage in thickness measurement for both OCD pad and Bond pad.

Keywords

chemical mechanical polishing; copper; integrated circuit measurement; surface topography measurement; thickness measurement; Cu; Metapulse; OCD pad; bond pad; chemical mechanical polishing; copper-CMP process; dielectric measurement; measurement method; thickness measurement; topography performance; Copper; Optical surface waves; Surface topography; Surface waves; Thickness measurement; Time measurement; CMP; Measurement method; OCD and Bond Pad;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153423

Filename

7153423