• DocumentCode
    720823
  • Title

    Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs

  • Author

    Simoen, E. ; Ritzenthaler, R. ; Schram, T. ; Spessot, A. ; Aoulaiche, M. ; Fazan, P. ; Na, H.-J. ; Lee, S.-G. ; Son, Y. ; Noh, K.B. ; Horiguchi, N. ; Thean, A. ; Claeys, C.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The oxide trap density profile in DRAM peripheral nMOSFETs with Mg cap and different thermal budgets for in-diffusion of the metal ions has been investigated by low-frequency noise. It is shown that close to the SiO2/HfO2 interface a peak in the trap density is found, which disappears under a high thermal budget. No impact of Mg on the bulk oxide trap density in the HfO2 is observed.
  • Keywords
    DRAM chips; MOS memory circuits; hafnium compounds; magnesium; silicon compounds; thermal diffusion; thermal management (packaging); DRAM peripheral nMOSFET; HfO2; Mg; SiO2; low-frequency noise; metal ion in-diffusion; oxide trap density profile; thermal budget; Logic gates; MOSFET circuits; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153430
  • Filename
    7153430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720823