Effect of VOx interlayer in Cu /HfOx/TiN cell and its resistive switching mechanism

Author

Zhang Hongzhi ; Zhang Kailiang ; Wang Fang ; Han Yemei ; Zhao Jinshi ; Wang Baolin ; Jian Xiaochuan ; Sun Kuo

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ. of Technol., Tianjin, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

In order to improve the performance of HfO_x-based resistive random access memory (RRAM), a VO_x buffer layer was introduced in the Cu/HfO_x interface of Cu/HfO_x/TiN RRAM cell in this paper. Their resistive switching characteristics (such as I-V characteristics, endurance and retention) and the switching mechanism were investigated. Results show that the VO_x buffer layer acts as a barrier which avoids excessive Cu ion reaching to HfO_x layer as result to improve the device performances. The current conduction mechanism of low resistive state (LRS) is Ohmic conduction while the high resistive state (HRS) is Schottky emission. Based on the negative temperature coefficient of LRS resistance and conduction mechanism, we believe that the resistive switching between HRS and LRS is attributed to the Cu-CF´s formation and rupture.

Keywords

buffer layers; copper; hafnium compounds; resistive RAM; titanium compounds; vanadium compounds; Cu; HRS; HfO_x; LRS resistance; RRAM cell; Schottky emission; TiN; VO_x; buffer layer; copper ion; current conduction mechanism; high resistive state; low resistive state; negative temperature coefficient; ohmic conduction; resistive random access memory; resistive switching mechanism; vanadium oxide interlayer effect; Commercialization; Hafnium compounds; Magnetic films; Radio frequency; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153474

Filename

7153474