Development of ito/layered a-P Si:H film stack for silicon heterojunction solar cells

Author

Shibin Gu ; Lin Zhang ; Jin Wang ; Mingchong Ren ; Yanru He ; Juan Zhang ; Zhan Xu ; Guangyu Chen ; Lingling Dai ; Guanchao Zhao ; Qi Wang ; Rong Yang ; Liwei Li ; Yuan Meng ; Guo, Ted

Author_Institution

ENN Solar Energy Co., Ltd., Langfang, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

This work focuses on the development of integrated front side film stack containing a-p Si:H film as the emitter and ITO film as the carrier collection layer in n-type silicon heterojunction (SHJ) solar cells. Doping concentration and thickness of a-p Si:H films, and O₂/Ar flow ratio of DC sputtered ITO films were varied to obtain optimal single layer properties. A combined ITO/double a-p Si:H stack was then developed and optimized to improve fill factor (FF) of SHJ solar cells. As a result, FF higher than 78% with conversion efficiency of 21.6% have been achieved in this work.

Keywords

amorphous semiconductors; silicon; solar cells; ITO film; SHJ solar cells; carrier collection layer; doping concentration; fill factor; front side film stack; n-type silicon heterojunction solar cells; Absorption; Doping; Films; Indium tin oxide; Photovoltaic cells; Resistance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153496

Filename

7153496