Spin relaxation in n-type multivalley semiconductors

Author

Song, Y. ; Chalaev, O. ; Dery, H.

Author_Institution

Univ. of Rochester, Rochester, NY, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This article discusses the mechanism for electron spin relaxation in silicon which is highly doped with P, As, Sb, and Bi. It is shown in this study that the intervalley scattering driven by donor impurities is more significant than the intravalley counterpart. These leading-order spin flips are dictated by the crystal and band structure symmetry. Observations show the microscopic mechanism to be the spin-orbit interaction with the central cell region of the donors rather than due to the ions´ long-range electric field, and associate the interaction strength with the fine spectrum of the donor states.

Keywords

antimony; arsenic; band structure; bismuth; crystal symmetry; elemental semiconductors; impurity scattering; impurity states; phosphorus; silicon; spin polarised transport; spin-orbit interactions; Si:As; Si:Bi; Si:P; Si:Sb; band structure symmetry; crystal symmetry; donor impurities; donor states; electron spin relaxation; interaction strength; intervalley scattering; intravalley scattering; leading-order spin flips; long-range electric field; n-type multivalley semiconductors; spin-orbit interaction; Couplings; Magnetoelectronics; Phonons; Robustness; Scattering; Silicon; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7156854

Filename

7156854