• DocumentCode
    721914
  • Title

    Voltage-gated skyrmion transistor

  • Author

    Zhang, X. ; Ezawa, M. ; Zhao, G. ; Zhou, Y.

  • Author_Institution
    Dept. of Phys., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Magnetic chiral skyrmions are localized topological field configurations, which are stabilized by Dzyaloshinskii-Moriya interaction and/or magnetostatic dipolar coupling in magnetic nanostructures. To realize and eventually commercialize skymionics, various challenges need to be solved such as creating and annihilation of skyrmions, conversion of skyrmions with different helicity and vorticity, efficient transmission and read-out of skyrmions, etc. This work addressed the critical problem of voltage control of magnetic skyrmion, in which the perpendicular magnetic anisotropy (PMA) in the gate region is locally controlled by an applied electric field due to the charge accumulations. With the configuration of applying a gate voltage in the center region of a magnetic nanotrack, two prototypes of transistors have been investigated: skyrmion driven by spin current and skyrmion driven by spin wave.
  • Keywords
    magnetic devices; nanomagnetics; perpendicular magnetic anisotropy; skyrmions; spin waves; transistors; voltage control; Dzyaloshinskii-Moriya interaction; magnetic chiral skyrmions; magnetic nanostructures; magnetic nanotrack; magnetostatic dipolar coupling; perpendicular magnetic anisotropy; spin current driven skyrmion; spin wave driven skyrmion; voltage-gated skyrmion transistor; Electric fields; Magnetostatic waves; Magnetostatics; Perpendicular magnetic anisotropy; Transistors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157173
  • Filename
    7157173