• DocumentCode
    721920
  • Title

    Electrical spin injection into InAs nanowires by local measurement

  • Author

    Wang, Z. ; Pan, D. ; Xu, X. ; Wu, Y. ; Miao, J. ; Yin, S. ; Zhao, J. ; Jiang, Y.

  • Author_Institution
    Sch. of State Key Lab. for Adv. Metals & Mater., Univ. of Sci. & Technol. Beijing, Beijing, China
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Electrical spin injection into semiconductors is fundamental to realize spintronic devices using the electron spin degree of freedom instead of or in addition to the charge. Datta-Das spin eld-eect transistor is a classical scheme which comprises ferromagnetic spin injector and detector while injected spins in the channel are manipulated by electric field. InAs nanowire is a suitable candidate as semiconductor channel in spin-FET because of its high electron mobility and especially strong spin-orbital interaction which makes it easier to control the precession of injected spins. In this work, we report the local measurement of spin transport characteristics in a InAs lateral spin valve, with Co/MgAl2O4 as the tunnel barrier contact.
  • Keywords
    III-V semiconductors; MOSFET; cobalt; electron mobility; ferromagnetic materials; indium compounds; magnesium compounds; magnetic semiconductors; magnetoelectronics; nanowires; spin polarised transport; spin valves; spin-orbit interactions; Co-MgAl2O4-InAs; Datta-Das spin field-effect transistor; InAs lateral spin valve; InAs nanowires; electric field; electrical spin injection; electron mobility; electron spin degree of freedom; ferromagnetic spin injector; injected spin precession; local measurement; semiconductor channel; spin transport characteristics; spin-orbital interaction; spintronic devices; tunnel barrier contact; Electrodes; Magnetic field measurement; Magnetization; Nanowires; Scanning electron microscopy; Semiconductor device measurement; Spin polarized transport;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157179
  • Filename
    7157179