• DocumentCode
    722117
  • Title

    Half-metallic electronic structure of Co2(Mn, Fe)Si electrodes investigated through tunneling spectroscopy for fully epitaxial magnetic tunnel junctions

  • Author

    Moges, K. ; Liu, H. ; Kawami, T. ; Uemura, T. ; Yamamoto, M.

  • Author_Institution
    Div. of Electron. for Inf., Hokkaido Univ., Sapporo, Japan
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Our purpose in the present study was to elucidate the origin of the giant TMR ratio of Co2(Mn,Fe)Si (CMFS) MTJs with lightly Fe-doped, Mn-rich CMFS electrodes. We took into consideration the valence electron number/f.u., Zt, of off-stoichiometric Co2MnSi (CMS) expressed as Co2MnαSiß decreases with increasing α from an Mn-deficient composition to an Mn-rich composition according to the antisite-based formula composition model [5]. The EF position would generally shift to the lower energy side in the half-metal gap with increasing α and finally cross the minority-spin valence band edge . On the other hand, the Zt value is increased by substituting Fe for Mn in CMS. First-principles calculations of Co2(Mn1-xFex)Si predicted that the EF position in the half-metal gap of these materials generally would shift to the higher energy side with an increase in x [6,7].
  • Keywords
    ab initio calculations; antisite defects; cobalt alloys; electrodes; energy gap; iron alloys; magnetic epitaxial layers; manganese alloys; silicon alloys; tunnelling magnetoresistance; valence bands; Co2(MnFe)Si; antisite-based formula composition model; electrodes; first-principles calculations; fully epitaxial magnetic tunnel junctions; giant TMR ratio; half-metal gap; half-metallic electronic structure; minority-spin valence band edge; off-stoichiometric Heusler alloy; tunneling spectroscopy; valence electron number; Electrodes; Iron; Magnetic tunneling; Manganese; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157432
  • Filename
    7157432