Title :
Anomalous Nernst effect in L10 type Mn-Ga alloy thin films
Author :
Mizuguchi, M. ; Inoue, M. ; Mizukami, S. ; Takanashi, K.
Author_Institution :
Inst. for Mater. Res. (IMR), Tohoku Univ., Sendai, Japan
Abstract :
L10 type MnGa alloy is attracting attention as materials to be applied to spintronic devices since they generally show large magnetic anisotropy, small saturation magnetization, and small Gilbert damping constant. It is known that an L10 type MnGa alloy thin film keeps large magnetic anisotropy with the increase of the Mn-composition even though saturation magnetization decreases. Thus, it is interesting to investigate various magnetic properties of this alloy-system. On the other hand, “spin-caloritronics”, which deals with a relationship between spin current and heat current, is getting an attracting research field. Previously, we studied a thermomagnetic phenomenon, that is, anomalous Nernst effect (ANE), of L10 type FePt alloy thin films, and evaluated anomalous Nernst coefficient and anomalous Nernst angle of the FePt thin film. Besides, a new-type of thermopile device using ANE was proposed to show a potential of ANE-based thermoelectric applications. In this paper, ANE of epitaxial Mnx-Ga1-x thin films with varied Mn-compositions (x) within the L10 composition range was systematically studied to explore their thermomagnetic characteristics. Moreover, anomalous Hall effects (AHE) of the films were investigated to understand the correlation of the two effects in L1 type Mn-Ga thin films.
Keywords :
gallium alloys; magnetic epitaxial layers; magnetisation; manganese alloys; metallic epitaxial layers; thermomagnetic effects; Gilbert damping constant; L10 type alloy epitaxial thin films; Mnx-Ga1-x; anomalous Nernst effect; magnetic anisotropy; saturation magnetization; thermomagnetic stand; Epitaxial growth; Magnetic field measurement; Magnetic fields; Magnetization; Metals; Saturation magnetization; Temperature measurement;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157458