Large inverse magnetoresistance induced by annealing effect in fully epitaxial FeCo/MgO/ Fe magnetic tunnel junctions

Author

Li, Q. ; Li, S. ; Xu, J. ; Yan, S. ; Ji, Y. ; Miao, G.

Author_Institution

Coll. of Phys. Sci., Qingdao Univ., Qingdao, China

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This study investigates the effect of annealing on the reversal of tunnel magnetoresistance (TMR) in magnetic tunnel junctions. The epitaxial layers are deposited on silicon substrates using e-beam evaporation method. X-ray diffraction and its pole figure mapping confirmed the epitaxy. It is shown that after annealing at 350°C for 1 hour, the TMR reverses its sign and shows a symmetry voltage dependence.

Keywords

X-ray diffraction; annealing; cobalt alloys; electron beam deposition; iron; iron alloys; magnesium compounds; magnetic epitaxial layers; magnetic multilayers; metallic epitaxial layers; tunnelling magnetoresistance; FeCo-MgO-Fe; Si; TMR; X-ray diffraction; annealing; e-beam evaporation; epitaxial layers; magnetic tunnel junctions; pole figure mapping; silicon substrates; symmetry voltage dependence; temperature 350 degC; time 1 hour; tunnel magnetoresistance; Annealing; Epitaxial growth; Iron; Junctions; Magnetic tunneling; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157498

Filename

7157498