Magnetization and X-ray absorption spectroscopy of Mn implanted Ge after flash lamp annealing

Author

Zhou, S. ; Wang, Y. ; Prucnal, S. ; Jiang, Z. ; Zhang, W. ; Wu, C. ; Weschke, E. ; Skorupa, W. ; Helm, M.

Author_Institution

Inst. of Ion Beam Phys. & Mater. Res., Helmholtz -Center Dresden-Rossendorf, Dresden, Germany

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Ge-based diluted magnetic semiconductors have drawn extensive attention over the past decades due to their potential to be applied in spintronic devices and to be integrated with the mainstream Si microelectronics as well. The hole-mediated effect in diluted magnetic semiconductors provides the possibility to realize the control of magnetic properties by the electrical control of free carriers. In this contribution, we will present the magnetic properties and X-ray absorption spectroscopy of Mn implanted Ge annealed by flash lamp, which is a sub-second annealing method and compatible with chip-technology.

Keywords

X-ray absorption spectra; germanium; incoherent light annealing; magnetisation; manganese; semimagnetic semiconductors; Ge:Mn; X-ray absorption spectroscopy; diluted magnetic semiconductors; flash lamp annealing; magnetization; spintronic devices; Annealing; Magnetic field measurement; Magnetic properties; Magnetic separation; Magnetization; Manganese; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157638

Filename

7157638