Transition metal-doped ZnO diluted magnetic semiconductors tuned by high pulsed magnetic field

Author

Zhong, M. ; Wang, S. ; Li, Y. ; Li, W. ; Hu, Y. ; Zhu, M. ; Jin, H.

Author_Institution

Lab. for Microstructures/Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Transition metal doped ZnO diluted magnetic semiconductors were synthesized by hydrothermal method under high magnetic field. Transition metal ions were incorporated into hexagonal wurtzite structural ZnO without secondary phases observed. High magnetic field can slightly improve real doped concentration and tune the magnetic property of TM-doped ZnO by controlling the type of dominant point defect.

Keywords

II-VI semiconductors; chromium; magnetic field effects; manganese; nickel; point defects; semiconductor doping; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; ZnO:Cr,Mn; ZnO:Cr,Ni; hexagonal wurtzite structural ZnO; high pulsed magnetic field; hydrothermal method; magnetic property; point defect; real doped concentration; transition metal ions; transition metal-doped ZnO diluted magnetic semiconductors; II-VI semiconductor materials; Ions; Magnetic fields; Magnetic properties; Magnetic semiconductors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157746

Filename

7157746