Title :
Comparison of magnetism and transport properties in Fe/X (X=C, Si, Ge) films
Author :
Li, X. ; Wang, Y. ; Jia, J. ; Li, J. ; Xu, X.
Author_Institution :
Key Lab. of Magn. Mol. & Magn. Inf. Mater. of Minist. of Educ., Shanxi Normal Univ., Linfen, China
Abstract :
This study aims to investigate the microstructural, magnetic, and transport properties of Fe/X (X = C, Si, Ge) films grown on glass substrates by magnetron sputtering. The three samples are vacuum annealed under 2×10-4 Pa pressure at temperatures of 400°C and 600°C for 60 min. The effects of the matrix elements (C, Si, Ge) and post-annealing process on the magnetization, particle size, and magnetoresistance of the composite films are determined.
Keywords :
annealing; carbon; composite materials; crystal microstructure; elemental semiconductors; germanium; interface magnetism; iron; magnetic thin films; magnetisation; magnetoresistance; particle size; semiconductor-metal boundaries; silicon; sputter deposition; Fe-C; Fe-Ge; Fe-Si; SiO2; composite films; glass substrates; magnetic properties; magnetization; magnetoresistance; magnetron sputtering; microstructural properties; particle size; pressure 0.0002 Pa; temperature 400 degC; temperature 600 C; time 60 min; transport properties; vacuum annealing; Annealing; Iron; Magnetic films; Magnetic properties; Saturation magnetization; Silicon;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157748
