Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate

Author

Oishi, Toshiyuki ; Higashi, Ryutaro ; Harada, Kazuya ; Koga, Yuta ; Kasu, Makoto ; Hirama, Kazuyuki

Author_Institution

Dept. of Electr. & Electron. Eng., Saga Univ., Saga, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

34

Lastpage

35

Abstract

This paper investigated the simulation model for NO₂-exposed H-terminated diamond FETs with Al₂O₃ insulator gate, which have very good DC/RF characteristics and thermally stable operation. The NO₂ adsorption and H terminated layer were replaced to fixed charges at the interface between the Al₂O₃ insulator and diamond. The simulation results agreed qualitatively with the experimental data. The formation of the two dimensional hole gas at on-state was confirmed at on-state. Moreover, drain current response was calculated for sinusoidal input of the gate electrode.

Keywords

diamond; field effect transistors; two-dimensional electron gas; Al₂O₃; H-terminated diamond FET; drain current response; gate electrode; insulator gate; sinusoidal input; two dimensional hole gas; Adsorption; Aluminum oxide; Diamonds; Field effect transistors; Insulators; Logic gates; Two dimensional hole gas; Al2O3 insulator gate; NO2 exposed; device simulation; diamond FET; fixed charge model;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158536

Filename

7158536