DocumentCode
722808
Title
Effective normal field of average inversion layer for InGaAs n-channel MOSFETs
Author
Goto, Yuta ; Hiroki, Akira ; Matsuda, Akihiro
Author_Institution
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
fYear
2015
fDate
4-5 June 2015
Firstpage
66
Lastpage
67
Abstract
This paper describes an effective normal field dependence of the average inversion layer depth for InGaAs MOSFETs. We evaluate the average inversion layer depth calculated by the conventional model in the circuit simulator. The results are compared with the quantum effect model. Also, we evaluate the quantum effect on the drain current. It is found that the accurate modeling of the quantum effect in the inversion layer is needed in modeling of the drain current.
Keywords
III-V semiconductors; MOSFET; indium compounds; inversion layers; InGaAs; average inversion layer; drain current; n-channel MOSFET; normal field dependence; quantum effect model; Indium gallium arsenide; Integrated circuit modeling; Logic gates; MOSFET; MOSFET circuits; Mathematical model; Semiconductor device modeling; InGaAs n-channel MOSFETs; average inversion layer depth; effective normal field;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-8614-9
Type
conf
DOI
10.1109/IMFEDK.2015.7158552
Filename
7158552
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